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BFP183R

NPNSiliconRFTransistor

NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom2mAto28mA •fT=8GHz F=1.2dBat900MHz

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP183R

NPNSiliconRFTransistor(Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto28mA)

NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom2mAto28mA •fT=8GHz F=1.2dBat900MHz

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

BFP183T

SiliconNPNPlanarRFTransistor

Features ●Lowpowerapplications ●Lownoisefigure ●HightransitionfrequencyfT=8GHz Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA.

VishayVishay Siliconix

威世科技威世科技半导体

BFP183TRW

SiliconNPNPlanarRFTransistor

Features ●Lowpowerapplications ●Lownoisefigure ●HightransitionfrequencyfT=8GHz Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA.

VishayVishay Siliconix

威世科技威世科技半导体

BFP183TW

SiliconNPNPlanarRFTransistor

Features ●Lowpowerapplications ●Lownoisefigure ●HightransitionfrequencyfT=8GHz Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA.

VishayVishay Siliconix

威世科技威世科技半导体

BFP183W

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom2mAto30mA •fT=8GHz,NFmin=0.9dBat900MHz •Pb-free(RoHScompliant)andhalogen-freepackage withvisibleleads •QualificationreportaccordingtoAEC-Q101

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP183W

NPNSiliconRFTransistor(Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA)

NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom2mAto30mA •fT=8GHz F=1.2dBat900MHz

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

BFP183W

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP183W

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFR183

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA •fT=8GHz,NFmin=0.9dBat900MHz •Pb-free(RoHScompliant)package •QualificationreportaccordingtoAEC-Q101available

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

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