丝印：N7；Package：SOT-343N；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend

文件：162.31 Kbytes 页数：16 Pages

PHI

飞利浦

丝印：N7；Package：SOT-343N；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

文件：132.2 Kbytes 页数：16 Pages

PHI

飞利浦

丝印：N8；Package：SOT-343R；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend

文件：162.31 Kbytes 页数：16 Pages

PHI

飞利浦

丝印：N8；Package：SOT-343R；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

文件：132.2 Kbytes 页数：16 Pages

PHI

飞利浦