BFG540WSLASHXR

Marking：N8；Package：SOT-343R；NPN 9 GHz wideband transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343NandSOT343Rpackages. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintend

BFG540WSLASHXR

Marking：N8；Package：SOT-343R；NPN 9 GHz wideband transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre

BFG540X

iscSiliconNPNRFTransistor

BFG540-X

NPNSILICONRFTRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V，IC=40mA，f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V，IC=10mA，f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V，IC=40mA，f=1GHz

BFG540-XR

NPNSILICONRFTRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V，IC=40mA，f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V，IC=10mA，f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V，IC=40mA，f=1GHz

BFP540

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor •Forhighestgainandlownoiseamplifier •OutstandingGms=21.5dBat1.8GHzMinimumnoisefigureNFmin=0.9dBat1.8GHz •Pb-free(RoHScompliant)andhalogen-freepackagewithvisibleleads •QualificationreportaccordingtoAEC-Q101available

BFP540

NPNSiliconRFTransistor

BFP540

LowNoiseSiliconBipolarRFTransistor

BFP540ESD

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor •ForESDprotectedhighgainlownoiseamplifier •HighESDrobustness typicalvalue1000V(HBM) •OutstandingGms=21.5dB@1.8GHz MinimumnoisefigureNFmin=0.9dB@1.8GHz •Pb-free(RoHScompliant)andhalogen-freepackage withvi

BFP540ESD

NPNSiliconRFTransistor