首页 >BFG540W/X其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343NandSOT343Rpackages. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintend | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343NandSOT343Rpackages. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintend | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscSiliconNPNRFTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NPNSILICONRFTRANSISTOR Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V，IC=40mA，f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V，IC=10mA，f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V，IC=40mA，f=1GHz | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | SKTECHNOLGY | ||
NPNSILICONRFTRANSISTOR Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V，IC=40mA，f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V，IC=10mA，f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V，IC=40mA，f=1GHz | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | SKTECHNOLGY | ||
NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor •Forhighestgainandlownoiseamplifier •OutstandingGms=21.5dBat1.8GHzMinimumnoisefigureNFmin=0.9dBat1.8GHz •Pb-free(RoHScompliant)andhalogen-freepackagewithvisibleleads •QualificationreportaccordingtoAEC-Q101available | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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