首页 >BFG520/X/XR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforapplicationsintheRFfrontendintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,pagersandsatelliteTVtuners(SATV)andrepeateramplifiersinfibre- | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforapplicationsintheRFfrontendintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,pagersandsatelliteTVtuners(SATV)andrepeateramplifiersinfibre- | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforapplicationsintheRFfrontendintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,pagersandsatelliteTVtuners(SATV)andrepeateramplifiersinfibre- | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN9GHzwidebandtransistors | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | JMNIC | ||
NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscSiliconNPNRFTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
DualNPNwidebandtransistor DESCRIPTION DualtransistorwithtwosiliconNPNRFdiesinasurfacemount6-pinSOT363(S-mini)package.Thetransistoris primarilyintendedforwidebandapplicationsintheGHz-rangeintheRFfrontendofanaloganddigitalcellular phones,cordlessphones,radardetectors,pagersan | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPNSiliconRFTransistor(Forhighestgainlownoiseamplifierat1.8GHzand2mA/2V) NPNSiliconRFTransistor Preliminarydata •Forhighestgainlownoiseamplifierat1.8GHzand2mA/2V OutstandingGa=20dB NoiseFigureF=0.95dB •Foroscillatorsupto15GHz •TransitionfrequencyfT=45GHz •Goldmetalizationforhighreliability •SIEGET®45-Line | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | SIEMENS |
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