首页 >BF998RMR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode Features •Integratedgateprotectiondiodes •Lownoisefigure •Lowfeedbackcapacitance •Highcrossmodulationperformance •Lowinputcapacitance •HighAGC-range •Highgain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SiliconN-ChannelMOSFETTetrode SiliconN_ChannelMOSFETTetrode •Short-channeltransistorwithhighS/Cqualityfactor •Forlow-noise,gain-controlledinputstageupto1GHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SiliconN-ChannelMOSFETTetrode(Short-channeltransistorwithhighS/Cqualityfactor) •Short-channeltransistorwithhighS/Cqualityfactor •Forlownoise,gain-controlledinputstagesupto1GHzReversepinoutversionofBF998 | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | SIEMENS | ||
N-channeldual-gateMOS-FET | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | JMNIC | ||
N-channeldual-gateMOS-FET DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicrominiatureSOT343Rpackagewithsourceandsubstrateinterconnected.Thetransistorisprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES •Highforward | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
TheProductDataAmendmentseriesofdocuments | CMLMICRO CML Microcircuits | CMLMICRO | ||
SiliconNPNPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
ATOBladeFuseRated32V | Littelfuselittelfuse 力特力特公司 | Littelfuse | ||
ATOBladeFuseRated32V | Littelfuselittelfuse 力特力特公司 | Littelfuse |
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