N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

文件：155.83 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

丝印：WMO；Package：SOT-343R；N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features • Integrated gate protection diodes • Low noise figure • Low feedback capacitance • High cross modulation performance • Low input capacitance • High AGC-range • High gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

文件：155.83 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件：318.61 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件：318.61 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件：318.61 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件：318.61 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件：318.61 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件：318.61 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

丝印：WMO；Package：SOT-343R；N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

文件：318.61 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

N-channel dual-gate MOSFET

Overview Archived content is no longer updated and is made available for historical reference only.\nDepletion type Field-Effect Transistor in a plastic SOT143 package. High forward transfer admittance to input capacitance ratio\nLow noise gain controlled amplifier up to 1 GHz;

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