PNP SILICON PLANAR TRANSISTOR

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SIEMENS

西门子

PNP SILICON PLANAR TRANSISTOR

Infineon

英飞凌

Small Signal Transistor PNP- Saturated Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 30 x 30 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.85 x 4.20 MILS Emitter Bonding Pad Area 7.35 x 3.75 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 15,000Å

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CENTRAL

Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 30 x 30 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.9 x 4.2 MILS Emitter Bonding Pad Area 7.4 x 3.8 MILS Top Side Metalization Al - 3

文件：396.16 Kbytes 页数：2 Pages

CENTRAL

Neodymium Magnets

Deep Pots ■■ Highest strength magnet material available ■■ Cylindrical magnets in a brass pot. Steel pole pieces ■■ Pot is an essential part of the magnetic circuit ■■ Both poles are on one face providing superior grip at contact ■■ Suitable for gripping and lifting applications ■■ Ideal for

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ECLIPSEMAGNETICS