BF1118W中文资料Silicon RF switches数据手册恩XP规格书

描述 Description

Overview Archived content is no longer updated and is made available for historical reference only.
These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are encapsulated in the SOT143B, SOT143R, SOT343N and SOT343R respectively. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges.

特性 Features

•Specially designed for low loss RF switching up to 1 GHz

应用 Application

Various RF switching applications such as:
Passive loop through for VCR tuner

Transceiver switching