贴片保险丝

- current features: between slow fuse\n\nBreaking capacity: 100 a @ 100 vac, 50 a @ 125 VDC\n\nStandard: UL 248-14\n\nThrough the certification: cURus\n\nMaterial: - ceramic matrix, both ends - silver plated\n\nbrass\n\nWorking temperature: 55 ℃ ~ + 125 ℃\n\nSolderability: 260 ℃ for 5 seconds or les

BFTECH

倍利加

PNP video transistor

DESCRIPTION PNP silicon transistor encapsulated in a 4-lead plastic SOT223 package. APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors.

文件：46.51 Kbytes 页数：6 Pages

PHI

PHI

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to t

文件：86.02 Kbytes 页数：12 Pages

PHI

PHI

VHF POWER MOSFET

DESCRIPTION: The ASI BLF246 is a vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES INCLUDE: • PG = 13 dB Typical at 175 MHz • 30:1 Load VSWR Capability • Omnigold™ metalization system

文件：21.77 Kbytes 页数：1 Pages

ASI