半导体放电管

BORNSEMI

伯恩斯

Dual-gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Sp

文件：159.54 Kbytes 页数：14 Pages

PHI

PHI

1100 Series Disposable Ear Plugs

文件：303.42 Kbytes 页数：2 Pages

3M

KNOB

文件：76.59 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

RF WIDEBAND TRANSFORMERS

文件：30.52 Kbytes 页数：1 Pages

XFMRS