PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C ● 60 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A

文件：153.05 Kbytes 页数：6 Pages

POINN

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON • Complement to type BDX53/A/B/C APPLICATIONS • Power linear and switching applications • Hammer drivers,audio amplifiers

文件：92.65 Kbytes 页数：3 Pages

SAVANTIC

Complementary Silicon Power Darlington Ttransistors

DESCRIPTION The BDX53C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. The complementary PNP t

文件：72.12 Kbytes 页数：1 Pages

TGS

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C ● 60 W at 25°C Case Temperature ● 8 A continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A

文件：718.11 Kbytes 页数：5 Pages

TRSYS

Transys Electronics

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Au

文件：80.9 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

NPN PLASTIC POWER TRANSISTORS

BDX53, 53A, 53B, 53C NPN PLASTIC POWER TRANSISTORS BDX54, 54A, 54B, 54C PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications

文件：49.38 Kbytes 页数：2 Pages

TEL

SILICON PNP POWER DARLINGTON TRANSISTOR

DESCRIPTION The BDX53F is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is BDX54F. ■ STMicroelectronics PREFERRED SALESTY

文件：47.91 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

Complementary Silicon Power Darlington Ttransistors

DESCRIPTION The BDX53F are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. The complementary PNP t

文件：72.11 Kbytes 页数：1 Pages

TGS

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector Current -IC= -8A • High DC Current Gain- : hFE= 500(Min)@ IC= -2A • Complement to Type BDX53F APPLICATIONS • Designed for use in power linear and switching applications.

文件：109.52 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector Current -IC= -8A • High DC Current Gain- : hFE= 500(Min)@ IC= -2A • Complement to Type BDX53F APPLICATIONS • Designed for use in power linear and switching applications.

文件：129.949 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司