型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
BDT60C | Complement to Type BDT61/A/B/C DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C ·Complement to Type BDT61/A/B/C APPLICATIONS ·Designed for use in audi 文件:199.63 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
BDT60C | PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS • Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C • 50 W at 25 °C Case Temperature • 4 A Continuous Collector Current • Minimum hFE of 750 at 1.5 V, 3 A 文件:212.33 Kbytes 页数:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
BDT60C | PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A 文件:168.47 Kbytes 页数:6 Pages | POINN | POINN | |
BDT60C | PNP SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A 文件:719.45 Kbytes 页数:5 Pages | TRSYS Transys Electronics | TRSYS | |
BDT60C | PNP SILICON POWER DARLINGTONS 文件:119.03 Kbytes 页数:5 Pages | Bourns 伯恩斯 | Bourns | |
isc Silicon PNP Darlington Power Transistors DESCRIPTION · DC Current Gain -hFE = 750(Min)@ IC= -1.5A · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF · Complement to Type BDT61F/61AF/61BF/61CF APPLICATIONS · D 文件:113.44 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | ||
Silicon PNP Darlington Power Transistors DESCRIPTION • DC Current Gain -hFE= 750(Min)@ IC=-1.5A • Collector-Emitter Sustaining Voltage- : VCEo(sus) = -60V(Min)- BDT60F; -SOV(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF • Complement to Type BDT61F/ 文件:131.08 Kbytes 页数:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | ||
BDT60C | PNP SILICON POWER DARLINGTONS | Power Innovations | Power Innovations | |
BDT60C | Trans Darlington PNP 120V 4A 3-Pin(3+Tab) TO-220 | NJS | NJS | |
Package:TO-220-3;包装:管件 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS PNP DARL 120V 4A TO220 | Bourns Inc. | Bourns Inc. |
技术参数
- Number of Elements per Chip:
1
- Minimum Operating Temperature:
-65°C
- Minimum DC Current Gain:
750@1.5A@3V
- Maximum Operating Temperature:
150°C
- Maximum Emitter Base Voltage:
5V
- Maximum Continuous DC Collector Current:
4A
- Maximum Collector Emitter Voltage:
120V
- Maximum Collector Base Voltage:
80V
- Configuration:
Single
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
24+ |
TO-220 |
10000 |
全新 |
询价 | |||
ST/进口原 |
17+ |
TO-220 |
6200 |
询价 | |||
恩XP |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
ST |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ST/意法 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
恩XP |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
ST |
1145+ |
TO-220 |
80 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST/意法 |
24+ |
NA/ |
3330 |
原装现货,当天可交货,原型号开票 |
询价 | ||
恩XP |
22+ |
TO-220 |
91344 |
询价 |
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