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BDT60C

Complement to Type BDT61/A/B/C

DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C ·Complement to Type BDT61/A/B/C APPLICATIONS ·Designed for use in audi

文件:199.63 Kbytes 页数:2 Pages

ISC

无锡固电

BDT60C

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS • Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C • 50 W at 25 °C Case Temperature • 4 A Continuous Collector Current • Minimum hFE of 750 at 1.5 V, 3 A

文件:212.33 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BDT60C

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A

文件:168.47 Kbytes 页数:6 Pages

POINN

BDT60C

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A

文件:719.45 Kbytes 页数:5 Pages

TRSYS

Transys Electronics

BDT60C

PNP SILICON POWER DARLINGTONS

文件:119.03 Kbytes 页数:5 Pages

Bourns

伯恩斯

BDT60CF

isc Silicon PNP Darlington Power Transistors

DESCRIPTION · DC Current Gain -hFE = 750(Min)@ IC= -1.5A · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF · Complement to Type BDT61F/61AF/61BF/61CF APPLICATIONS · D

文件:113.44 Kbytes 页数:2 Pages

ISC

无锡固电

BDT60CF

Silicon PNP Darlington Power Transistors

DESCRIPTION • DC Current Gain -hFE= 750(Min)@ IC=-1.5A • Collector-Emitter Sustaining Voltage- : VCEo(sus) = -60V(Min)- BDT60F; -SOV(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF • Complement to Type BDT61F/

文件:131.08 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BDT60C

PNP SILICON POWER DARLINGTONS

Power Innovations

BDT60C

Trans Darlington PNP 120V 4A 3-Pin(3+Tab) TO-220

NJS

BDT60C-S

Package:TO-220-3;包装:管件 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS PNP DARL 120V 4A TO220

Bourns Inc.

Bourns Inc.

技术参数

  • Number of Elements per Chip:

    1

  • Minimum Operating Temperature:

    -65°C

  • Minimum DC Current Gain:

    750@1.5A@3V

  • Maximum Operating Temperature:

    150°C

  • Maximum Emitter Base Voltage:

    5V

  • Maximum Continuous DC Collector Current:

    4A

  • Maximum Collector Emitter Voltage:

    120V

  • Maximum Collector Base Voltage:

    80V

  • Configuration:

    Single

供应商型号品牌批号封装库存备注价格
24+
TO-220
10000
全新
询价
ST/进口原
17+
TO-220
6200
询价
恩XP
23+
TO-220
11846
一级代理商现货批发,原装正品,假一罚十
询价
ST
20+
TO-220
38560
原装优势主营型号-可开原型号增税票
询价
ST/意法
23+
TO-220
50000
全新原装正品现货,支持订货
询价
ST
23+
TO-220
50000
全新原装正品现货,支持订货
询价
恩XP
2022+
TO-220
12888
原厂代理 终端免费提供样品
询价
ST
1145+
TO-220
80
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ST/意法
24+
NA/
3330
原装现货,当天可交货,原型号开票
询价
恩XP
22+
TO-220
91344
询价
更多BDT60C供应商 更新时间2025-10-12 16:01:00