BDT60C

PNP SILICON POWER DARLINGTONS

PNPSILICONPOWERDARLINGTONS •DesignedforComplementaryUsewithBDT60,BDT60A,BDT60BandBDT60C •50Wat25°CCaseTemperature •4AContinuousCollectorCurrent •MinimumhFEof750at1.5V,3A

BDT60C

Complement to Type BDT61/A/B/C

DESCRIPTION ·DCCurrentGain-hFE=750(Min)@IC=-1.5A ·Collector-EmitterSustainingVoltage- :VCEO(SUS)=-60V(Min)-BDT60;-80V(Min)-BDT60A; -100V(Min)-BDT60B;-120V(Min)-BDT60C ·ComplementtoTypeBDT61/A/B/C APPLICATIONS ·Designedforuseinaudi

BDT60C

PNP SILICON POWER DARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBDT61,BDT61A,BDT61BandBDT61C ●50Wat25°CCaseTemperature ●4AContinuousCollectorCurrent ●MinimumhFEof750at1.5V,3A

BDT60C

PNP SILICON POWER DARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBDT61,BDT61A,BDT61BandBDT61C ●50Wat25°CCaseTemperature ●4AContinuousCollectorCurrent ●MinimumhFEof750at1.5V,3A

BDT60C

PNP SILICON POWER DARLINGTONS

BDT60C

PNP SILICON POWER DARLINGTONS;

BDT60C

Trans Darlington PNP 120V 4A 3-Pin(3+Tab) TO-220;

BDT60CF

isc Silicon PNP Darlington Power Transistors

DESCRIPTION ·DCCurrentGain-hFE=750(Min)@IC=-1.5A ·Collector-EmitterSustainingVoltage- :VCEO(SUS)=-60V(Min)-BDT60F;-80V(Min)-BDT60AF -100V(Min)-BDT60BF;-120V(Min)-BDT60CF ·ComplementtoTypeBDT61F/61AF/61BF/61CF APPLICATIONS ·D

BDT60CF

Silicon PNP Darlington Power Transistors

DESCRIPTION •DCCurrentGain-hFE=750(Min)@IC=-1.5A •Collector-EmitterSustainingVoltage-:VCEo(sus)=-60V(Min)-BDT60F;-SOV(Min)-BDT60AF -100V(Min)-BDT60BF;-120V(Min)-BDT60CF •ComplementtoTypeBDT61F/

BDT60C-S

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 120V 4A TO220

Bourns Inc.