电机驱动芯片

Bardeen

巴丁微电子

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 1.8A, RDS(ON) = 250mΩ @VGS = 10V. RDS(ON) = 330mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-89 package.

文件：754.57 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 2.6A, RDS(ON) = 230mΩ @VGS = 10V. RDS(ON) = 270mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package.

文件：411.76 Kbytes 页数：4 Pages

CET

华瑞

LED- Photoconductor Isolators

[CLAIREX] LED-Photoconductor Isolators

文件：72.2 Kbytes 页数：2 Pages

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