Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

文件：46.49 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

EPITAXIAL-BASE,SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS

Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors

文件：138.09 Kbytes 页数：3 Pages

Intersil

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) • Low Saturation Voltage • Complement to Type BD801 APPLICATIONS • Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and out

文件：246.28 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) • Low Saturation Voltage • Complement to Type BD801 APPLICATIONS • Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and out

文件：129.419 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Power Transistor

DESCRIPTION ·DC Current Gain -: hFE = 30(Min.)@ IC= 2A ·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 60V(Min) ·Complement to Type BD808 APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

文件：245.69 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • DC Current Gain - :hFE=30@lc=-2A • Collector-Emitter Sustaining Voltage- : VCEo(sus)= -60V(Min) • Complement to Type BD807 APPLICATIONS • Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

文件：127.53 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 30 (Min) @ IC = 2.0 Adc • BD 808, 810 are complementary with BD 807, 890

文件：104.97 Kbytes 页数：4 Pages

Motorola

摩托罗拉

isc Silicon PNP Power Transistor

DESCRIPTION • DC Current Gain - : hFE =30@ IC= -2A • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) • Complement to Type BD807 APPLICATIONS • Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

文件：246.98 Kbytes 页数：2 Pages

ISC

无锡固电

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 30 (Min) @ IC = 2.0 Adc • BD 808, 810 are complementary with BD 807, 890

文件：49.32 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

POWER TRANSISTORS PNP SILICON

Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features • DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc • Pb-Free Packages are Available*

文件：49.56 Kbytes 页数：8 Pages

ONSEMI

安森美半导体