COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

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STMICROELECTRONICS

意法半导体

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件：252.33 Kbytes 页数：6 Pages

STMICROELECTRONICS

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Medium Power Linear and Switching

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ONSEMI

安森美半导体

Plastic Medium?뭁ower Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons

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ONSEMI

安森美半导体

Plastic Medium-Power Silicon PNP Darlingtons

文件：87.44 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

isc Silicon PNP Darlington Power Transistor

文件：188.95 Kbytes 页数：2 Pages

ISC

无锡固电

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

• Good hFE linearity\n• Monolithic Darlington configuration with integrated antiparallel collector-emitter diode• High fT frequency;

ST

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Trans Darlington PNP 60V 4A 3-Pin(3+Tab) SOT-32 Tube

NJS

Transistor

Comset

Package：TO-225AA，TO-126-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 60V 4A SOT32-3

STMICROELECTRONICS

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