NPN Epitaxial Silicon Transistor

文件：230.32 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

Plastic Medium?뭁ower Silicon NPN Darlingtons

This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain: hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A,

文件：60.93 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Plastic Medium-Power Silicon NPN Darlingtons

文件：87.33 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Medium Power Linear and Switching Applications

文件：230.32 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

互补硅功率达林顿晶体管

The devices are manufactured in planar base island technology with monolithic Darlington configuration. • Good hFE linearity \n• Monolithic Darlington configuration with integrated antiparallel collector-emitter diode \n• High fT frequency;

ST

意法半导体

Transistor

Comset

TRANSISTOR:Darilington

First Silicon

Package：TO-225AA，TO-126-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 60V 4A SOT32-3

STMICROELECTRONICS

意法半导体

Package：TO-225AA，TO-126-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 60V 4A TO126-3

ONSEMI

安森美半导体

Package：TO-225AA，TO-126-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 60V 4A TO126-3

ONSEMI

安森美半导体