SEMICONDUCTORS

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ETCList of Unclassifed Manufacturers

未分类制造商

中等功率 PNP 达林顿双极功率晶体管

This series of plastic, medium-powerPNP Darlington transistors can be used as output devices in complementary general-purpose amplifier applications. • High DC Current Gain - hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc\n• Monolithic Construction\n• BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681\n• BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703\n• Pb-Free Packages are Available;

ONSEMI

安森美半导体

NPN SILICON DARLINGTON TRANSISTORS

Infineon

英飞凌

Package：TO-225AA，TO-126-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 45V 4A TO126

ONSEMI

安森美半导体

3-phase motor pre-driver for LBP

Description This product is the motor predriver for high-side/low-side N-channel MOS-FET drive, which has the built-in booster (step-up) circuit. BD6761FS uses the drive type controlled by the servo signal input from outside and BD6762FV incorporates a servo circuit (Speed discriminator + PLL ser

文件：206.12 Kbytes 页数：5 Pages

ROHM

罗姆

3-phase motor pre-driver for LBP

Description This product is the motor predriver for high-side/low-side N-channel MOS-FET drive, which has the built-in booster (step-up) circuit. BD6761FS uses the drive type controlled by the servo signal input from outside and BD6762FV incorporates a servo circuit (Speed discriminator + PLL ser

文件：342.11 Kbytes 页数：6 Pages

ROHM

罗姆

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compli

文件：76.26 Kbytes 页数：3 Pages

COMSET

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD675A/677A/679A/681 • DARLINGTON • High DC current gain APPLICATIONS • For medium power linear and switching applications

文件：131.11 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage— : V(BR)CEo = -45 V • DC Current Gain— : hFE = 750(Min)@lc=-2A • Complement to Type BD675A APPLICATIONS • Designed for use as output devices in complementary general-purpose amplifier applications.

文件：124.36 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP DARLIGNTON POWER SILICON TRANSISTORS

PNP DARLIGNTON POWER SILICON TRANSISTORS For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703.

文件：55.2 Kbytes 页数：3 Pages

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