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BD439

丝印:BD439;Package:TO-126;TO-126 Plastic-Encapsulate Transistors

FEATURES Amplifier and Switching Applications Complement To BD440, BD442

文件:2.547 Mbytes 页数:5 Pages

DGNJDZ

南晶电子

BD439

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD439 and BD441 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in power linear and switching applications. The complementary PNP types are BD440, and BD442 respectively. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP -

文件:69.79 Kbytes 页数:4 Pages

STMICROELECTRONICS

意法半导体

BD439

Silicon NPN transistor in a TO-126F Plastic Package.

Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features Complementary pair with BD440. Applications Medium power linear and switching applications.

文件:835.84 Kbytes 页数:6 Pages

FOSHAN

蓝箭电子

BD439

EPITAXIAL SILICON POWER TRANSISTORS

EPITAXIAL SILICON POWER TRANSISTORS Intended for use in Medium Power Linear and Switching Applications

文件:70.36 Kbytes 页数:3 Pages

TEL

BD439

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR BD439, BD440 series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for medium power, low speed switching applications. MARKING: FULL PART NUMBER

文件:519.559 Kbytes 页数:2 Pages

CENTRAL

BD439

NPN Silicon Power Transistors

Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Intended for use in medium power near and switching applications • With TO-126 package • Halogen free

文件:342.28 Kbytes 页数:3 Pages

MCC

BD439

SILICON NPN POWER TRANSISTORS

SILICON NPN POWER TRANSISTORS. The BD439-BD441 are NPN Transistors mounted in Jedec TO-126 plastic package. They are recommended for use in medium power linear and switching applications. PNP complements are BD440-BD442. Compliance to RoHS.

文件:72.99 Kbytes 页数:3 Pages

COMSET

BD439

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD440,BD442 APPLICATIONS • For medium power linear and switching applications

文件:130.32 Kbytes 页数:3 Pages

ISC

无锡固电

BD439

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Amplifier and Switching Applications ● Complement To BD440, BD442

文件:1.32784 Mbytes 页数:3 Pages

JIANGSU

长电科技

BD439

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= 60V(Min) • Complement to type BD440 APPLICATIONS • Designed for medium power linear and switching applications.

文件:125.52 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

晶体管资料

  • 型号:

    BD439

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    低频或音频放大 (LF)_功率放大 (L)

  • 封装形式:

    直插封装

  • 极限工作电压:

    60V

  • 最大电流允许值:

    4A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BD187,BD197,3DD64C,

  • 最大耗散功率:

    36W

  • 放大倍数:

  • 图片代号:

    B-21

  • vtest:

    60

  • htest:

    100000100

  • atest:

    4

  • wtest:

    36

产品属性

  • 产品编号:

    BD439

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    卷带(TR)

  • 晶体管类型:

    NPN

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    800mV @ 300mA,3A

  • 电流 - 集电极截止(最大值):

    100µA(ICBO)

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    40 @ 500mA,1V

  • 频率 - 跃迁:

    3MHz

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-225AA,TO-126-3

  • 供应商器件封装:

    TO-126

  • 描述:

    TRANS NPN 60V 4A TO126

供应商型号品牌批号封装库存备注价格
onsemi
25+
TO-126
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
ON
24+
CASE77
6000
询价
STM
24+
原厂封装
4000
原装现货假一罚十
询价
ST
16+
T0-126
10000
全新原装现货
询价
PH
24+
TO-126
5000
全现原装公司现货
询价
ST
25+
TO-126
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
ST
23+
TO-126
5000
专做原装正品,假一罚百!
询价
长电
25+23+
TO-126
24318
绝对原装正品全新进口深圳现货
询价
ST
18+
TO-126
85600
保证进口原装可开17%增值税发票
询价
长电
24+
TO-126
65300
一级代理/放心购买!
询价
更多BD439供应商 更新时间2026-1-17 13:16:00