丝印：BD433；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Amplifier and Switching Applications Complement To BD434, BD436 And BD438

文件：1.05321 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：BD433；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Amplifier and Switching Applications Complement To BD434, BD436 And BD438

文件：1.05321 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：BD433；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Amplifier and Switching Applications Complement To BD434, BD436 And BD438

文件：1.05321 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：BD433；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Amplifier and Switching Applications Complement To BD434, BD436 And BD438

文件：1.05321 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 4 A Collector-base voltage V(BR)CBO: BD433 22 V BD435 32 V BD437 45 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：102.09 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

TRANSISTOR (NPN)

FEATURES Amplifier and Switching Applications

文件：224.46 Kbytes 页数：2 Pages

FS

EPITAXIAL SILICON POWER TRANSISTORS

EPITAXIAL SILICON POWER TRANSISTORS Intended for use in Medium Power Linear and Switching Applications

文件：70.36 Kbytes 页数：3 Pages

TEL

Plastic-Encapsulated Transistors

EPITAXIAL SILICON POWER TRANSISTORS Intended for use in Medium Power Linear and Switching Applications

文件：55.28 Kbytes 页数：1 Pages

TEL

SILICON NPN POWER TRANSISTORS

SILICON NPN POWER TRANSISTORS. The BD433-BD435-BD437 are NPN Transistors mounted in Jedec TO-126 plastic package. They are recommended for use in medium power linear and switching applications. PNP complements are BD434-BD436-BD438. Compliance to RoHS.

文件：74.11 Kbytes 页数：3 Pages

COMSET

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD434/436/438 APPLICATIONS • For medium power linear and switching applications

文件：130.82 Kbytes 页数：3 Pages

ISC

无锡固电