丝印：BD433；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Amplifier and Switching Applications Complement To BD434, BD436 And BD438

文件：1.05321 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：BD433；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Amplifier and Switching Applications Complement To BD434, BD436 And BD438

文件：1.05321 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：BD433；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Amplifier and Switching Applications Complement To BD434, BD436 And BD438

文件：1.05321 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：BD433；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Amplifier and Switching Applications Complement To BD434, BD436 And BD438

文件：1.05321 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

500-mA 3.3-V or 5.0-V Output LDO Regulators

●General Description The BD4xxM5 series are low quiescent regulators featuring 45 V absolute maximum voltage, and output voltage accuracy of ±2 (3.3 V or 5 V: Typ.), 500 mA output current and 38 μA (Typ.) current consumption. These regulators are therefore ideal for applications requiring a

文件：1.81532 Mbytes 页数：39 Pages

ROHM

罗姆

SILICON NPN POWER TRANSISTORS

SILICON NPN POWER TRANSISTORS. The BD433-BD435-BD437 are NPN Transistors mounted in Jedec TO-126 plastic package. They are recommended for use in medium power linear and switching applications. PNP complements are BD434-BD436-BD438. Compliance to RoHS.

文件：74.11 Kbytes 页数：3 Pages

COMSET

TRANSISTOR (NPN)

FEATURES Amplifier and Switching Applications

文件：224.46 Kbytes 页数：2 Pages

FS

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Amplifier and Switching Applications ● Complement To BD434, BD436 And BD438

文件：939.6 Kbytes 页数：3 Pages

JIANGSU

长电科技

EPITAXIAL SILICON POWER TRANSISTORS

Intended for use in Medium Power Linear and Switching Applications BD436,BD438,BD440,BD434,BD442 ->PNP BD435 ,BD437 ,BD439 ,BD433 ,BD441 -->NPN TO126 Plastic Package

文件：136.38 Kbytes 页数：4 Pages

CDIL

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 4 A Collector-base voltage V(BR)CBO: BD433 22 V BD435 32 V BD437 45 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：102.09 Kbytes 页数：1 Pages

WINNERJOIN

永而佳