isc Silicon PNP Power Transistor

DESCRIPTION • Excellent Safe Operating Area • DC Current Gain-hFE= 25(Min.)@IC = -4A • Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0 V(Max)@ IC = -5A • Complement to Type BD313 APPLICATIONS • Designed for high quality amplifiers operating up to 60 watts into 4 ohm load.

文件：216.04 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Excellent Safe Operating Area • DC Current Gain-hFE= 25(Min.)@IC = -4A • Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0 V(Max)@ IC = -5A • Complement to Type BD313 APPLICATIONS • Designed for high quality amplifiers operating up to 60 watts into 4 ohm load.

文件：128.419 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

DUAL DIGIT LED DISPLAYS

文件：195.31 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

DUAL DIGIT LED DISPLAYS

文件：195.31 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

NPN HIGH FREQUENCY SILICON PLANAR EPITAXIAL TRANSISTOR

GENERAL DESCRIPTION The BF314 is a NPN silicon planar epitaxial transistor designed for use as RF amplifier and VHF & UHF input stage in common base configuration.

文件：83.88 Kbytes 页数：1 Pages

MICRO-ELECTRONICS