| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD245 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available 文件：91.29 Kbytes 页数：6 Pages | POINN | POINN | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current 文件：145.07 Kbytes 页数：3 Pages | SAVANTIC | SAVANTIC | ||
PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD245 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available 文件：465.8 Kbytes 页数：5 Pages | TRSYS Transys Electronics | TRSYS | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current 文件：145.07 Kbytes 页数：3 Pages | SAVANTIC | SAVANTIC | ||
PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD245 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available 文件：91.29 Kbytes 页数：6 Pages | POINN | POINN | ||
PNP SILICON POWER TRANSISTORS PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD245 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available 文件：465.8 Kbytes 页数：5 Pages | TRSYS Transys Electronics | TRSYS | ||
Silicon PNP Power Transistor DESCRIPTION • Collector Current -IC= -10A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(Min)- BD246C • Complement to Type BD245/A/B/C APPLICATIONS • Designed for use in general purpose power amp 文件：135.14 Kbytes 页数：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | ||
isc Silicon PNP Power Transistor DESCRIPTION • With TO-3PN package • Complement to type BD249/A/B/C • 125 W at 25°C case temperature • 25 A continuous collector current 文件：197.22 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD245 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available 文件：108.19 Kbytes 页数：5 Pages | BOURNS 伯恩斯 | BOURNS | ||
PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS The BD246 series are PNP power transistors in a TO3PN envelope. They are the power transistors for power amplifier and high-speed-switching applications. The complementary is BD245, A, B, C Compliance to RoHS. 文件：75.06 Kbytes 页数：3 Pages | COMSET | COMSET |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-PNP
- 性质：
低频或音频放大 （LF）_功率放大 （L）
- 封装形式：
直插封装
- 极限工作电压：
45V
- 最大电流允许值：
10A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BD214/45,BD250,BD258/45,TIP34,3CD10B,
- 最大耗散功率：
80W
- 放大倍数：
- 图片代号：
B-62
- vtest：
45
- htest：
999900
- atest：
10
- wtest：
80
详细参数
- 型号：
BD246
- 功能描述：
两极晶体管 - BJT 80W PNP Silicon
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
PNP 集电极—基极电压
- VCBO：
集电极—发射极最大电压
- VCEO：
- 40 V 发射极 - 基极电压
- VEBO：
- 6 V
- 增益带宽产品fT：
直流集电极/Base Gain hfe
- Min：
100 A
- 安装风格：
SMD/SMT
- 封装/箱体：
PowerFLAT 2 x 2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
TO-3PN |
10000 |
全新 |
询价 | |||
ON |
16+ |
TO-3P |
10000 |
全新原装现货 |
询价 | ||
ST |
24+ |
TO-218 |
15000 |
原装现货热卖 |
询价 | ||
TOSHIBA/东芝 |
25+ |
TO-3P-3 |
16 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
TOS |
22+ |
TO-3P-3 |
6000 |
十年配单,只做原装 |
询价 | ||
ti |
25+ |
500000 |
行业低价,代理渠道 |
询价 | |||
TOSHIBA |
2025+ |
TO-3P |
5425 |
全新原厂原装产品、公司现货销售 |
询价 | ||
26+ |
N/A |
47000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
ATMEL/爱特梅尔 |
2026+ |
TO-3P |
10 |
原装正品 假一罚十! |
询价 | ||
ST |
24+ |
TO-126 |
5000 |
只做原装公司现货 |
询价 |
