Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 100V 6A TO220-3

ONSEMI

安森美半导体

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability • Withstands full load mismatc

文件：91.97 Kbytes 页数：12 Pages

PHI

PHI

Octal buffer/line driver with 5-volt tolerant inputs/outputs 3-Statetitle

DESCRIPTION The 74LVC244A/74LVCH244A is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3V or 5V devices. In 3-State operation, outputs can handle 5V. These features allow the use of these

文件：96.96 Kbytes 页数：10 Pages

PHI

PHI

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain: hFE = 3000 Typ @ IC = 4A • Collector–Emitter Sustainin

文件：26.51 Kbytes 页数：2 Pages

NTE