VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability • Withstands full load mismatc

文件：91.97 Kbytes 页数：12 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

VHF power MOS transistor

文件：80.54 Kbytes 页数：12 Pages

JMNIC

锦美电子

VHF power MOS transistor

DESCRIPTION\nSilicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier\napplications in the VHF frequency range.FEATURES\n• High power gain\n• Low noise figure\n• Easy power control\n• Good thermal stability\n• Withstands full load mismatch\n• Gold metallizatio • High power gain\n• Low noise figure\n• Easy power control\n• Good thermal stability\n• Withstands full load mismatch\n• Gold metallization ensures excellent reliability.;

恩XP

RF MOSFET

NJS

新泽西半导体

VHF power MOS transistor

文件：80.54 Kbytes 页数：12 Pages

JMNIC

锦美电子

VHF power MOS transistor

文件：80.54 Kbytes 页数：12 Pages

JMNIC

锦美电子

Package：SOT-123A；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET NCHA 65V 17DB SOT123A

Ampleon USA Inc.