Complementary Silicon Plastic Power Transistors

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ONSEMI

安森美半导体

6.0 A，80 V，PNP 双极功率晶体管

The 6 A, 100 V PNP Bipolar Power Transistor is designed for use in general purpose amplifier and switching applications. BD243B, BD243C (NPN); BD244B, BD244C (PNP) are complementary devices. • Collector - Emitter Saturation Voltage -VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc\n• Collector Emitter Sustaining Voltage - VCEO(sus) = 80 Vdc (Min)BD243B, BD244B VCEO(sus) = 100 Vdc (Min) - BD243C, BD244C\n• High Current Gain Bandwidth ProductfT = 3.0 MHz (Min) @ IC = 500 mAdc\n• Compact TO-220 AB ;

ONSEMI

安森美半导体

Trans GP BJT PNP 80V 6A 3-Pin(3+Tab) TO-220AB Bulk

NJS

Transistor

Comset

Package：TO-220-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 80V 6A TO220

ONSEMI

安森美半导体

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 80V 6A TO220

Bourns Inc.

Package：TO-220-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 80V 6A TO220-3

ONSEMI

安森美半导体