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FRS244D

9A,250V,0.415Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRS244H

9A,250V,0.415Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRS244R

9A,250V,0.415Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSS244

DC/DCConverterApplications

Features •LowON-resistance. •4Vdrive. •Ultrahighspeedswitching.

SANYOSanyo

三洋三洋电机株式会社

G244B

T-1,(3-mm)Round,QuadPCBMountLEDIndicator

idea

idea

GFC244

NChannelPowerMOSFETwithextremelylowRDS(on)

GSGGunter Seniconductor GmbH.

Gunter Seniconductor GmbH.

HB244

OCTALBUFFERS/DRIVERSWITH3-STATEOUTPUTS

TITexas Instruments

德州仪器美国德州仪器公司

HC244

Octal3-StateNoninvertingBuffer/LineDriver/LineReceiver

TheSL74HC244isidenticalinpinouttotheLS/ALS244.ThedeviceinputsarecompatiblewithstandardCMOSoutputs;withpullupresistors,theyarecompatiblewithLS/ALSTTLoutputs.Thisoctalnoninvertingbuffer/linedriver/linereceiverisdesignedtobeusedwith3-statememoryaddressdrivers

SLSSystem Logic Semiconductor

System Logic Semiconductor

HCS244D

RadiationHardenedOctalBuffer/LineDriver,Three-State

Description TheIntersilHCS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SO

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS244D

RadiationHardenedOctalBuffer/LineDriver,Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si)/s •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS244D/Sample

RadiationHardenedOctalBuffer/LineDriver,Three-State

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS244DMSR

RadiationHardenedOctalBuffer/LineDriver,Three-State

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS244DMSR

RadiationHardenedOctalBuffer/LineDriver,Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si)/s •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS244DMSR

RadiationHardenedOctalBuffer/LineDriver,Three-State

Description TheIntersilHCS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SO

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS244DTR

RadiationHardenedOctalBuffer/LineDriver,Three-State

Intersil‘sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS244HMSR

RadiationHardenedOctalBuffer/LineDriver,Three-State

Description TheIntersilHCS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SO

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS244HMSR

RadiationHardenedOctalBuffer/LineDriver,Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si)/s •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS244HMSR

RadiationHardenedOctalBuffer/LineDriver,Three-State

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS244K

RadiationHardenedOctalBuffer/LineDriver,Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si)/s •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS244K

RadiationHardenedOctalBuffer/LineDriver,Three-State

Description TheIntersilHCS244MSisaRadiationHardenedNonInvertingOctalBuffer/LineDriver,Three-State,withtwoactive-lowoutputenables. TheHCS244MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SO

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

产品属性

  • 产品编号:

    BD244B-S

  • 制造商:

    Bourns Inc.

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    管件

  • 晶体管类型:

    PNP

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    1.5V @ 1A,6A

  • 电流 - 集电极截止(最大值):

    700µA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    15 @ 3A,4V

  • 工作温度:

    -65°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3

  • 供应商器件封装:

    TO-220

  • 描述:

    TRANS PNP 80V 6A TO220

供应商型号品牌批号封装库存备注价格
BOURNSINC
23+
TO-TO-220
12300
全新原装真实库存含13点增值税票!
询价
BOURNSINC
23+
TO-220
10000
公司只做原装正品
询价
Bourns Inc.
2022+
TO-220
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
FAI
2500
询价
FAI
23+
540
原装现货,欢迎咨询
询价
fsc
dc11
原厂封装
1100
INSTOCK:50/tube/to220
询价
Fairchild
16+
原厂封装
10000
全新原装正品,代理优势渠道供应,欢迎来电咨询
询价
FAIRCHILD
22+23+
TO220
11211
绝对原装正品全新进口深圳现货
询价
安森美
21+
12588
原装现货,价格优势
询价
FAIRCHILD/仙童
22+
TO-220
157179
原装正品现货,可开13个点税
询价
更多BD244B-S供应商 更新时间2024-6-1 15:30:00