丝印：BD237；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

文件：2.48834 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：BD237；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

文件：2.48834 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：BD237；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

文件：2.48834 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：BD237；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

文件：2.48834 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

Silicon NPN Power Transistor

DESCRIPTION • DC Current Gain- : hFE=40(Min)@lc=0.15A • Complement to Type BD234/236/238 APPLICATIONS • Designedfor use in 5-10 watt audio amplifiers and drivers utilizing complementaryor quasi complementarycircuits.

文件：193.51 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

80V, NPN TRANSISTORS

DESCRIPTION The UTC BD237 is an NPN transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, etc. FEATURES * Complement to UTC BD238 respectively * High collector-emitter breakdown voltage

文件：113.02 Kbytes 页数：3 Pages

UTC

友顺

EPITAXIAL SILICON POWER TRANSISTORS

EPITAXIAL SILICON POWER TRANSISTORS Intended for use in Medium Power Linear Switching Applications

文件：492.4 Kbytes 页数：4 Pages

CDIL

NPN Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Power Dissipation: PCM =1.25W, Ta=25°C • Collector Current : IC=2A • Complement to BD234/236/238 respectively • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy

文件：283.29 Kbytes 页数：3 Pages

MCC

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION • DC Current Gain- : hFE=40(Min)@lc=0.15A • Complement to Type BD234/236/238 APPLICATIONS • Designedfor use in 5-10 watt audio amplifiers and drivers utilizing complementaryor quasi complementarycircuits.

文件：138.24 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃

文件：125.97 Kbytes 页数：1 Pages

WINNERJOIN

永而佳