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BD237

丝印:BD237;Package:TO-126;TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

文件:2.48834 Mbytes 页数:5 Pages

DGNJDZ

南晶电子

BD237-TU

丝印:BD237;Package:TO-126;TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

文件:2.48834 Mbytes 页数:5 Pages

DGNJDZ

南晶电子

BD237

丝印:BD237;Package:TO-126;TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

文件:2.48834 Mbytes 页数:5 Pages

DGNJDZ

南晶电子

BD237-TU

丝印:BD237;Package:TO-126;TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

文件:2.48834 Mbytes 页数:5 Pages

DGNJDZ

南晶电子

BD237

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃

文件:125.97 Kbytes 页数:1 Pages

WINNERJOIN

永而佳

BD237

Silicon NPN transistor in a TO-126 Plastic Package.

Descriptions Silicon NPN transistor in a TO-126 Plastic Package. Features Complementary pair with BD238. Applications Medium power linear and switching applications.

文件:960.35 Kbytes 页数:6 Pages

FOSHAN

蓝箭电子

BD237

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃

文件:58.18 Kbytes 页数:1 Pages

TEL

BD237

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. ■ SGS-THOMSON PREFERRED SALESTYPES

文件:75.78 Kbytes 页数:5 Pages

STMICROELECTRONICS

意法半导体

BD237

Low voltage NPN power transistors

Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD238. Features ■ Low saturation voltage ■ NPN transistors Applications ■ Audio,

文件:232.89 Kbytes 页数:9 Pages

STMICROELECTRONICS

意法半导体

BD237

NPN power transistors

Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are BD236 and BD238 respectively. Features ■ NPN transistors Applications ■ Audio,

文件:261.41 Kbytes 页数:9 Pages

STMICROELECTRONICS

意法半导体

晶体管资料

  • 型号:

    BD237(-6...-16)

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    低频或音频放大 (LF)_功率放大 (L)

  • 封装形式:

    直插封装

  • 极限工作电压:

    100V

  • 最大电流允许值:

    2A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BD179,BD379,BD441,3DD61D,

  • 最大耗散功率:

    25W

  • 放大倍数:

  • 图片代号:

    B-21

  • vtest:

    100

  • htest:

    999900

  • atest:

    2

  • wtest:

    25

详细参数

  • 型号:

    BD237

  • 功能描述:

    两极晶体管 - BJT NPN General Purpose

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
STM
21+
SOT-32-3 (TO-126-3)
1000
询价
ST
24+
TO-126
36000
一级代理/全新原装现货/长期供应!
询价
STM
21+
2000
SOT-32-3 (TO-126-3)
询价
CJ
24+
TO-126
100
只做原装
询价
ST/意法半导体
25+
SOT-32-3
4650
绝对原装公司现货
询价
ST/意法
23+/24+
TO126
9865
主推型号,原装正品,终端BOM表可配单,可开13点税
询价
PHI
25+
TO-126
6500
十七年专营原装现货一手货源,样品免费送
询价
ST/意法
2025+
SOT-32
5000
原装进口价格优 请找坤融电子!
询价
ST(意法半导体)
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
PHI
23+
TO-126
32000
全新原装深圳现货库存,特价·
询价
更多BD237供应商 更新时间2026-1-17 17:30:00