Single-Channel Ultra-Fast Gate Driver For Automotive

Features ◼ AEC-Q100 Qualified(Note 1) ◼ Gate Driver Voltage Range 4.5 V to 5.5 V ◼ Minimum Input Pulse Width 1.25 ns (220 pF load) ◼ Typical Rise Time 0.65 ns (220 pF load) ◼ Typical Fall Time 0.70 ns (220 pF load) ◼ Built-in Undervoltage Lockout (UVLO) between VCC and GND ◼ Inverting and

文件：1.28101 Mbytes 页数：19 Pages

ROHM

罗姆

丝印：D2311C；Package：SSON06RX2020；Single-Channel Ultra-Fast Gate Driver For Automotive

Features ◼ AEC-Q100 Qualified(Note 1) ◼ Gate Driver Voltage Range 4.5 V to 5.5 V ◼ Minimum Input Pulse Width 1.25 ns (220 pF load) ◼ Typical Rise Time 0.65 ns (220 pF load) ◼ Typical Fall Time 0.70 ns (220 pF load) ◼ Built-in Undervoltage Lockout (UVLO) between VCC and GND ◼ Inverting and

文件：1.28101 Mbytes 页数：19 Pages

ROHM

罗姆

Single-Channel Ultra-Fast Gate Driver For Automotive

BD2311NVX-C is a single gate driver capable of driving GaN HEMTs at Ultra-Fast with narrow pulses, which can contribute to the long-range and high accuracy of LiDAR.It can supply 5.4A output current in a small 6-pin SON package. As a protection function, the driver includes an Undervoltage Lockout ( • AEC-Q100 Qualified (Grade 1)\n• Gate Driver Voltage Range 4.5V to 5.5V\n• Minimum Input Pulse Width 1.25ns (220pF load)\n• Typical Rise Time 0.65ns (220pF load)\n• Typical Fall Time 0.70ns (220pF load)\n• Built-in Undervoltage Lockout (UVLO) between VCC and GND\n• Inverting and Non-inverting Input;

ROHM

罗姆

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -3.5A, RDS(ON) = 85mΩ @VGS = -4.5V. RDS(ON) = 130mΩ @VGS = -2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TSOP-6 package.

文件：131.72 Kbytes 页数：4 Pages

CET

华瑞

T-1 3/4 Bi-Pin Base (.125)

T-1 3/4 Bi-Pin Base (.125)

文件：217.57 Kbytes 页数：1 Pages

CML

2.3 Inch Single Digit Alphanumeric Display

文件：184.57 Kbytes 页数：6 Pages

CHINASEMI