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BD136-TU

TO-126Plastic-EncapsulateTransistors

FEATURES HighCurrent ComplementToBD135,BD137AndBD139

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

BFP136

NPNSiliconRFTransistor(ForpoweramplifierinDECTandPCNsystems)

NPNSiliconRFTransistor •ForpoweramplifierinDECTandPCNsystems •fT=5.5GHz •Goldmetalizationforhighreliability

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

BFP136

NPNSiliconRFTransistor

NPNSiliconRFTransistor ●ForpoweramplifierinDECTandPCNsystems ●fT=5.5GHz ●Goldmetalizationforhighreliability

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP136W

NPNSiliconRFTransistor

NPNSiliconRFTransistor ●ForpoweramplifierinDECTandPCNsystems ●fT=5.5GHz ●Goldmetalizationforhighreliability

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP136W

NPNSiliconRFTransistor(ForpoweramplifierinDECTandPCNsystems)

NPNSiliconRFTransistor •ForpoweramplifierinDECTandPCNsystems •fT=5.5GHz •Goldmetalizationforhighreliability

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

BFQ136

NPN4GHzwidebandtransistor

DESCRIPTION NPNtransistorinafour-leaddual-emitterSOT122Aenvelopewithaceramiccap.Allleadsareisolatedfromthestud.Diffusedemitter-ballastingresistorsandtheapplicationofgoldsandwich metallizationensureanoptimumtemperatureprofileandexcellentreliabilitypropertie

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BGY136

VHFpoweramplifiermodules

DESCRIPTION TheBGY135andBGY136aretwo-stagebroadbandRFamplifiermodulesinaSOT132Bpackage.EachmoduleconsistsoftwoNPNtransistordiestogetherwithlumped-elementmatchingcomponents. FEATURES •12.5Vnominalsupplyvoltage •18Woutputpower. APPLICATIONS •Mobilecommunica

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BL-HA136A

SURFACEMOUNTCHIPLEDLAMPS

YSTONEYellow Stone Corp

早安股份早安股份有限公司

BL-HA136A-TRB

EmittedColor:Amber

BRIGHTBRIGHT LED ELECTRONICS CORP

步来特电器宁波步来特电器有限公司

BL-HA136D

SURFACEMOUNTCHIPLEDLAMPS

YSTONEYellow Stone Corp

早安股份早安股份有限公司

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