丝印：BK；Package：SC-62；80 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according t

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80 V, 1 A NPN medium power transistors

NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package • High collector current capability IC and ICM\n• Three current gain selections\n• High power dissipation capability\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

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80 V, 1 A PNP power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：238.53 Kbytes 页数：12 Pages

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80 V, 1 A NPN power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：239.42 Kbytes 页数：12 Pages

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Mounting Tube

文件：56.69 Kbytes 页数：2 Pages

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