60 V, 1 A NPN medium power transistors

NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. • High current\n• Three current gain selections\n• High power dissipation capability\n• Exposed heatsink for excellent thermal and electrical conductivity\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

丝印：BG；Package：SC-62；60 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia JEITA NPN complement BCX55-Q BCX52-Q BCX55-10-Q BCX52-10-Q BCX55-16-Q SOT89 SC-62 BCX52-16-Q 2. Featur

文件：228.8 Kbytes 页数：12 Pages

NEXPERIA

安世

Package：TO-243AA；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：BCX55-10-Q/SOT89/MPT3

Nexperia USA Inc.

60 V, 1 A PNP power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：238.58 Kbytes 页数：12 Pages

NEXPERIA

安世

60 V, 1 A NPN power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：239.38 Kbytes 页数：12 Pages

NEXPERIA

安世

Voltage regulator diodes

DESCRIPTION Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 ±5 tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZX55-C2V4 to BZX55-C75). FEATURES • Tot

文件：41.92 Kbytes 页数：7 Pages

PHI

PHI