PNP Silicon AF Transistors

Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX 54 … BCX 56 (NPN)

文件：146.11 Kbytes 页数：5 Pages

SIEMENS

西门子

丝印：AG；Package：SC-62；60 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.74331 Mbytes 页数：22 Pages

NEXPERIA

安世

Plastic-Encapsulate Transistors

FEATURES • IC = -1A Continuous Collector Current • Low Saturation Voltage VCE(sat)

文件：189.59 Kbytes 页数：2 Pages

HOTTECH

合科泰

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS COMPLEMENTARY TYPE – BCX51 – BCX54 BCX52 – BCX55 BCX53 – BCX56

文件：28.4 Kbytes 页数：1 Pages

ZETEX

丝印：AG；Package：SOT89；60 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrica

文件：239.25 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：C3；Package：SOT89；60 V, 1 A PNP power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：238.58 Kbytes 页数：12 Pages

NEXPERIA

安世

60 V, 1 A NPN power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：239.38 Kbytes 页数：12 Pages

NEXPERIA

安世

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89

Features • BVCEO > -45V, -60V & -80V • IC = -1A Continuous Collector Current • ICM = -2A Peak Pulse Current • Low Saturation Voltage VCE(SAT)

文件：132.04 Kbytes 页数：7 Pages

DIODES

美台半导体

PNP Plastic-Encapsulate Transistors

Features ● Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) ● Power Dissipation: PCM=0.5W (Tamb=25°C) ● Collector Current: ICM=-1.0A ● Collector-Base Voltage: V(BR)CBO=-60V ● Marking Code: BCX52=AE, BCX52-10=AG, BCX52-16=AM ● Epoxy meets UL 94 V-

文件：293.35 Kbytes 页数：3 Pages

MCC

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCX54...BCX56 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

文件：141 Kbytes 页数：5 Pages

INFINEON

英飞凌