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LBAS70LT1

SCHOTTKYBARRIER(DOUBLE)DIODE

DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection.Singlediodesanddoublediodeswithdifferentpinningareavailable. Features ●Lowforwardcurrent ●Highbreakdownvoltage ●Guardringprotected ●Lowdiodecapacitance. APPLICATIONS ●Ultra

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LBAS70LT1G

SCHOTTKYBARRIERDIODELowforwardcurrent

DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection.Singlediodesanddoublediodeswithdifferentpinningareavailable. WedeclarethatthematerialofproductcompliancewithRoHSrequirements. Features ●Lowforwardcurrent ●Highbreakdownvolta

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LBAV70LT1

MonolithicDualSwitchingDiodeCommonCathode

MonolithicDualSwitchingDiode CommonCathode ●Pb−FreePackageisAvailable.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LBAV70LT1G

MonolithicDualSwitchingDiodeCommonCathode

MonolithicDualSwitchingDiode CommonCathode ●Pb−FreePackageisAvailable.

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LBCW70LT1G

GeneralPurposeTransistorsPNPSilicon

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

MMBTA70LT1

GeneralPurposeTransistor(PNPSilicon)

GeneralPurposeTransistor PNPSilicon

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

MMBTA70LT1

GeneralPurposeTransistor(PNPSilicon)

GeneralPurposeTransistor PNPSilicon

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMBTA70LT1

GeneralPurposeTransistor

GeneralPurposeTransistor PNPSilicon

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MMBTA70LT1G

GeneralPurposeTransistor

GeneralPurposeTransistor PNPSilicon Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NSVBAS70LT1G

SchottkyBarrierDiodes

SchottkyBarrierDiodes TheseSchottkybarrierdiodesaredesignedforhighspeedswitching applications,circuitprotection,andvoltageclamping.Extremelylow forwardvoltagereducesconductionloss.Miniaturesurfacemount packageisexcellentforhandheldandportableapplicationswhere

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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