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BFR30LT1

JFETAmplifiers(N-Channel)

JFETAmplifiers N-Channel

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

BFR30LT1

JFETAmplifiers(N-Channel)

JFETAmplifiers N−Channel Features •Pb−FreePackageisAvailable

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BFR30LT1G

JFETAmplifiers(N-Channel)

JFETAmplifiers N−Channel Features •Pb−FreePackageisAvailable

ONSEMION Semiconductor

安森美半导体安森美半导体公司

LBAT30LT1G

SCHOTTKYBARRIERDIODE

●Features ExtremelyLowForwardVoltage0.3V(max)@IF=10mA S-PrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC-Q101 QualifiedandPPAPCapable. ●Construction Siliconepitaxialplanar ●Wedeclarethatthematerial

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

SBCW30LT1G

GeneralPurposeTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

S-LBAT30LT1G

SCHOTTKYBARRIERDIODE

●Features ExtremelyLowForwardVoltage0.3V(max)@IF=10mA S-PrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC-Q101 QualifiedandPPAPCapable. ●Construction Siliconepitaxialplanar ●Wedeclarethatthematerial

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

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