丝印：BCT757；Package：SOIC；OCTAL BUFFER/DRIVER WITH OPEN-COLLECTOR OUTPUTS

BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Open-Collector Outputs Drive Bus Lines or Buffer Memory Address Registers Package Options Include Plastic description This octal bu

文件：557.43 Kbytes 页数：11 Pages

TI

德州仪器

丝印：BCT757；Package：SOIC；OCTAL BUFFER/DRIVER WITH OPEN-COLLECTOR OUTPUTS

BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Open-Collector Outputs Drive Bus Lines or Buffer Memory Address Registers Package Options Include Plastic description This octal bu

文件：557.43 Kbytes 页数：11 Pages

TI

德州仪器

700/800/900 MHz MIMO Yagi Antennas with Dual Polarization

Features Dual linearly polarized Temperature range -40° C to +85° C Wind survival rating > 200 mph Return loss > 14 dB Port to port isolation > 35 dB VSWR: ≤ 1.5:1 Cross polarization discrimination > 25 dB

文件：174.17 Kbytes 页数：1 Pages

PCTEL

SUB-MINIATURE SILICON HIGH VOLTAGE FAST RECOVERY RECTIFIER

文件：55.82 Kbytes 页数：1 Pages

EDAL

SUB-MINIATURE SILICON HIGH VOLTAGE FAST RECOVERY RECTIFIER

RECOVERY TIME: Io = 2mA to 4mA to 1 mA – 150 n SEC.

文件：55.52 Kbytes 页数：1 Pages

EDAL