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BFR183W

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFR183W

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFR183W

iscSiliconNPNRFTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BFY183

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFY183

HiRelNPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFY183

HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductor)

Features •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA •Hermeticallysealedmicrowavepackage •fT=8GHz,F=2.3dBat2GHz •eesaqualified •ESA/SCCDetailSpec.No.:5611/006

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

BFY183ES

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFY183H

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFY183P

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFY183S

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

详细参数

  • 型号:

    BCR183T

  • 制造商:

    INFINEON

  • 制造商全称:

    Infineon Technologies AG

  • 功能描述:

    PNP Silicon Digital Transistor

供应商型号品牌批号封装库存备注价格
INFINEON
24+
SOT-523
9200
新进库存/原装
询价
INFINEON
24+
SOT-523
3000
原装现货假一罚十
询价
Infineon
24+
SC75
5000
全现原装公司现货
询价
INFINEON
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
SOT-423
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
INFINEON
1922+
SOT-523
35689
原装进口现货库存专业工厂研究所配单供货
询价
INFINEON/英飞凌
23+
SOT-523
50000
全新原装正品现货,支持订货
询价
INFINEON
22+
SOT-523
8000
终端可免费供样,支持BOM配单
询价
INFINEON
2023+环保现货
SO8
5000
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
INFINEON/英飞凌
22+
SOT-523
14148
原装
询价
更多BCR183T供应商 更新时间2025-7-24 16:30:00