PNP Silicon Digital Transistor

文件：155.3 Kbytes 页数：8 Pages

INFINEON

英飞凌

GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 3.5 mW (typ.) ● Infrared light emission close to monochromatic light : λP = 950 nm (typ.) ● Small ceramic package

文件：39.02 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN Transistor TV Vertical Deflection

Description: The NTE162 is an NPN transistor in a TO3 type case designed for medium–to–high voltage inverters, converters, regulators, and switching circuits. Features: • High Voltage: VCEX = 400V • Gain Specified to 3.5A • High Frequency Response to 2.5MHz

文件：24.04 Kbytes 页数：2 Pages

NTE

POWER TRANSISTORS(10A,320-380V,125W)

文件：143.87 Kbytes 页数：3 Pages

MOSPEC

统懋