BCX56-16

NPNTRANSISTOR

VOLTAGE45~80.0VoltsCURRENT1.0Ampers FEATURES ●Highcurrent(max.1A). ●Lowvoltage(max.80V).

BCX56-16

NPNPlastic-EncapsulateTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •PowerDissipation:PCM=0.5W(Tamb=25°C) •CollectorCurrent:ICM=1.0A •Collector-BaseVoltage:V(BR)CBO=100V •Marking:BCX56=BH,BCX56-10=BK,BCX56-16=BL •EpoxymeetsU

BCX56-16

SURFACEMOUNTNPNSILICONTRANSISTOR

BCX56-16

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCX51...BCX53(PNP)

BCX56-16

NPNSiliconAFTransistors(ForAFdriverandoutputstagesHighcollectorcurrent)

Features ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCX51…BCX53(PNP)

BCX56-16

NPNmediumpowertransistors

DESCRIPTION NPNmediumpowertransistorinaSOT89plasticpackage.PNPcomplements:BCX51,BCX52andBCX53. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.80V). APPLICATIONS •Driverstagesofaudioandvideoamplifiers.

BCX56-16

80V,1ANPNmediumpowertransistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BCX56-16

80V,1ANPNmediumpowertransistors

1.Generaldescription NPNmediumpowertransistorsinaSOT89(SC-62)flatleadSurface-MountedDevice(SMD) plasticpackage 2.Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability 3.Applications •Li

BCX56-16

Plastic-EncapsulateTransistors

FEATURES PNPComplementstoBCX51,BCX52,BCX53 LowVoltage HighCurrent APPLICATIONS DriverStagesofAudioAmplifiers

BCX56-16

SOT-89-3LPlastic-EncapsulateTransistors

FEATURES ®PNPComplementstoBCX51,BCX52,BCX53 ®LowVoltage ®HighCurrent APPLICATIONS ®DriverStagesofAudioAmplifiers