丝印：7N；Package：TSSOP6；65 V, 100 mA NPN/NPN matched double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Current gain matching • Base-emitter voltage matching • Drop-in replacement for standard double transistors • No mutual interference between the transistors • High-temperature applications up to 1

文件：238.68 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

65 V, 100 mA NPN/NPN matched double transistor

NPN/NPN matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n PNP/PNP complement: BCM856BSH-Q • Low collector capacitance\n• Low collector-emitter saturation voltage\n• Current gain matching\n• Base-emitter voltage matching\n• Drop-in replacement for standard double transistors\n• No mutual interference between the transistors\n• High-temperature applications up to 175 °C\n• Qualified accord;

Nexperia

安世

NPN/NPN matched double transistor

1. General description NPN/NPN matched double transistor in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package. The transistors are fully isolated internally. 2. Features and benefits • Current gain matching • Base-emitter voltage matching • Drop-in replacement for s

文件：237.25 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NPN Silicon AF Transistor Array

NPN Silicon AF Transistor Array • Precision matched transistor pair: ∆IC ≤ 10 • For current mirror applications • Low collector-emitter saturation voltage • Two (galvanic) internal isolated Transistors • Complementary type: BCM856S • BCM846S: For orientation in reel see package informati

文件：184.08 Kbytes 页数：7 Pages

Infineon

英飞凌

NPN Silicon AF Transistor Array

文件：91.07 Kbytes 页数：9 Pages

Infineon

英飞凌