首页 >BCM4301>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -40V,-20A,RDS(ON)=42mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=65mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-40V,-6A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-40V,-6.3A,RDS(ON)=44mΩ@VGS=-10V. RDS(ON)=68mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -40V,-20A,RDS(ON)=42mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=65mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | CHENMKO | ||
P-ChannelEnhancementModeFieldEffectTransistor VOLTAGE40VoltsCURRENT6.3Ampere FEATURE *Smallflatpackage.(SC-73/SOT-223) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplicat | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | CHENMKO | ||
0.4InchTriadDigitsDisplay | CHINASEMI China Semiconductor Corporation | CHINASEMI |
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