BSS138

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes3and4) •QualifiedtoAEC-Q101StandardsforHighReliability

BSS138

N-CHANNELMOSFETinaSOT-23PlasticPackage

Descriptions N-CHANNELMOSFETinaSOT-23PlasticPackage. Features LowRDS(on),ruggedandreliable,compactindustrystandardSOT-23surfacemountpackage. Applications Lowcurrentapplicationssuchassmallservomotorcontrol,powerMOSFETgatedrivers,andotherswitchingapplicatio

BSS138

N-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low

BSS138

N-ChannelEnhancementModeFieldEffectTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •HighdensecelldesignforextremelylowRDS(ON) •Ruggedandreliable •Leadfreeproductisacquired •SOT-23Package •MarkingCode:SS •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1