BSS138

SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeLogicLevel)

SIPMOS®Small-SignalTransistor •Nchannel •Enhancementmode •LogicLevel •VGS(th)=0.8...2.0V

BSS138

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

SOT23N-CHANNELENHANCEMENTMODEVERTICALDMOSFET PARTMARKINGDETAIL–SS

BSS138

SmallSignalMOSFETN-Channel

Features: *LowOn-Resistance:3.5Ω *LowInputCapacitance:40PF *LowOutputCapacitance:12PF *LowThreshole:1.5V *FastSwitchingSpeed:20ns Application: *DCtoDCConverter *Cellular&PCMCIACard *CordlessTelephone *PowerManagementinPortableandBatteryetc.

BSS138

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

BSS138

DirectLogic-LevelInterface:TTL/CMOS

GENERALFEATURES ●VDS=50V,ID=0.22A RDS(ON)

BSS138

N-CHANNELLOGICLEVELENHANCEMENTMODE

■DESCRIPTION ThisdeviceemploysadvancedMOSFETtechnologyandfeatureslowgatechargewhilemaintaininglowon-resistance. Optimizedforswitchingapplications,thisdeviceimprovestheoverallefficiencyofDC/DCconvertersandallowsoperationtohigherswitchingfrequencies. ■FEATURES

BSS138

NCEN-ChannelEnhancementModePowerMOSFET

GENERALFEATURES ●VDS=50V,ID=0.22A RDS(ON)

BSS138

50VN-ChannelEnhancementModeMOSFET-ESDProtected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •RDS(ON),VGS@2.5V,IDS@100mA=6Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystem

BSS138

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingFairchild’sproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Theseprod

BSS138

N-ChannelEnhancementModeFieldEffectTransistor

Features •50V,0.22A, RDS(ON)=3.5Ω@VGS=10V RDS(ON)=6.0Ω@VGS=4.5V •HighdensitycelldesignforlowRDS(ON). •RuggedandReliable. •SOT-23package