Double-Ended Cordsets

BCC M425-M413-3A-602-EX43T2-003 Basic features Approval/Conformity CE cULus WEEE

文件：114.03 Kbytes 页数：2 Pages

BALLUFF

巴鲁夫

N-Channel Enhancement-Mode Vertical DMOS FETs

Features ❏ Low threshold — 1.6V max. ❏ High input impedance ❏ Low input capacitance — 140pF typical ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices Applications ❏ Log

文件：44.21 Kbytes 页数：4 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu

文件：480.47 Kbytes 页数：4 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu

文件：480.47 Kbytes 页数：4 Pages

SUTEX