SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● NPN Complement to BC868 ● Low Voltage ● High Current ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H

文件：427.67 Kbytes 页数：2 Pages

WILLAS

威伦电子

Plastic-Encapsulate Transistors

FEATURES • NPN Complement to BC868 • Low Voltage • High Current

文件：168.61 Kbytes 页数：2 Pages

HOTTECH

合科泰

PNP medium power transistor

DESCRIPTION PNP medium power transistor in a SOT89 plastic package. NPN complement: BC868. FEATURES • High current (max. 1 A) • Low voltage (max. 20 V). APPLICATIONS • Low voltage, high current LF applications.

文件：42.82 Kbytes 页数：8 Pages

PHI

PHI

PNP Medium Power Transistors

Features • High current (max. 1.0A) • Low voltage (max. 20V) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF

文件：199.62 Kbytes 页数：2 Pages

MCC

PNP medium power transistor; 20 V, 1 A

General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Features and benefits ■ High current ■ Three current gain selections ■ High power dissipation capability ■ Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT10

文件：177.41 Kbytes 页数：11 Pages

恩XP

20 V, 2 A PNP medium power transistors

General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Features and benefits ■ High current ■ Three current gain selections ■ High power dissipation capability ■ Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT10

文件：266.58 Kbytes 页数：24 Pages

恩XP

丝印：CGC；Package：SC-62；20 V, 2 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.11315 Mbytes 页数：24 Pages

NEXPERIA

安世

丝印：CHC；Package：SC-62；20 V, 2 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.11315 Mbytes 页数：24 Pages

NEXPERIA

安世

20 V, 2 A PNP medium power transistors

General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Features and benefits ■ High current ■ Three current gain selections ■ High power dissipation capability ■ Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT10

文件：266.58 Kbytes 页数：24 Pages

恩XP

PNP medium power transistor; 20 V, 1 A

General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Features and benefits ■ High current ■ Three current gain selections ■ High power dissipation capability ■ Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT10

文件：177.41 Kbytes 页数：11 Pages

恩XP