PNP medium power transistor; 20 V, 1 A

General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Features and benefits ■ High current ■ Three current gain selections ■ High power dissipation capability ■ Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT10

文件：177.41 Kbytes 页数：11 Pages

恩XP

20 V, 2 A PNP medium power transistors

General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Features and benefits ■ High current ■ Three current gain selections ■ High power dissipation capability ■ Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT10

文件：266.58 Kbytes 页数：24 Pages

恩XP

丝印：CGC；Package：SC-62；20 V, 2 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.11315 Mbytes 页数：24 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNP medium power transistor

DESCRIPTION PNP medium power transistor in a SOT89 plastic package. NPN complement: BC868. FEATURES • High current (max. 1 A) • Low voltage (max. 20 V). APPLICATIONS • Low voltage, high current LF applications.

文件：42.82 Kbytes 页数：8 Pages

PHI

飞利浦

PNP Medium Power Transistors

Features • High current (max. 1.0A) • Low voltage (max. 20V) • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF

文件：199.62 Kbytes 页数：2 Pages

MCC

PNP Medium Power Transistors

文件：253.71 Kbytes 页数：2 Pages

MCC

20 V, 2 A PNP medium power transistor

PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BC868. • High current\n• Three current gain selections\n• High power dissipation capability\n• Exposed heatsink for excellent thermal and electrical conductivity\n• AEC-Q101 qualified;

Nexperia

安世

Package：TO-243AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 20V 1A SOT89

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司