Plastic-Encapsulate MOSFETS

DESCRIPTION The BC8820K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration.

文件：558.24 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

Epitaxial Planar Transistor

文件：357.47 Kbytes 页数：2 Pages

SECOS

喜可士

3A , 70 V NPN Plastic-Encapsulate Transistor

文件：395.79 Kbytes 页数：2 Pages

SECOS

喜可士

3A , 70 V NPN Plastic-Encapsulate Transistor

文件：395.79 Kbytes 页数：2 Pages

SECOS

喜可士