BC859CW/ZLF

Package：SC-70，SOT-323；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS SOT323

Nexperia USA Inc.

BC859S

SurfaceMountGeneralPurposeSi-Epi-PlanarDouble-Transistors

BC859S

Powerdissipation,plasticcase,Weightapprox

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation300mW •PlasticcaseSOT-363 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC859W

PNPSiliconEpitaxialPlanarTransistor

PNPSiliconEpitaxialPlanarTransistor forgeneralpurposeandswitchingapplications

BC859W

PNPGeneralPurposeTransistor

■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●ComplementstoBC849WandBC850W.

BC859W

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC859W

PNPSiliconAFTransistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846W,BC847W,BC848W,BC849W,BC850W(NPN)

BC859W

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT323plasticpackage. NPNcomplements:BC849WandBC850W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

BC859W

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors

BC859W

PNPGENERALPURPOSETRANSISTORS

VOLTAGE30/45/65VoltsCURRENT200mWatts FEATURES •Generalpurposeamplifierapplications •PNPepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •Complimentary(NPN)Devices:BC846W/BC847W/BC848W/BC849WSeries •IncompliancewithEURoHS2002/95/ECdirectives