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BC859C

SMDGeneralPurposePNPTransistors

Diotec

Diotec Semiconductor

BC859C

PNPTransistors

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

BC859C

PNPgeneralpurposetransistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC859CL

GENERALPURPOSETRANSISTORSPNPSILICON

DESCRIPTION The BC856857858859ALBL/CLareavailablein SOT23package FEATURES ⚫MoistureSensitivityLevel:1 ⚫ESDRatingHumanBodyModel:>4000V MachineModel:>400 V ⚫AvailableinSOT23package

AITSEMIAiT Semiconductor Inc.

创瑞科技AiT创瑞科技

BC859CMTF

PNPEpitaxialSiliconTransistor

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC859,BC860 •ComplementtoBC846...BC850

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

BC859CW

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

Diotec

Diotec Semiconductor

BC859CW

PNPSiliconAFTransistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846W,BC847W,BC848W,BC849W,BC850W(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BC859CW

PNPSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC847W,BC848W,BC849W,BC850W(NPN)

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

BC859CW

PNPGeneralPurposeTransistor

■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●ComplementstoBC849WandBC850W.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

BC859CW

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT323plasticpackage. NPNcomplements:BC849WandBC850W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

详细参数

  • 型号:

    BC859BMTF_Q

  • 功能描述:

    两极晶体管 - BJT SOT-23 PNP GP AMP

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
PHILIPS
23+
SOT-23R
31000
全新原装现货
询价
KEC
21+
SOT-23
120000
长期代理优势供应
询价
KEC
23+
SOT-23
50000
全新原装正品现货,支持订货
询价
KEC
23+
SOT-23
16041
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
KEC
24+
NA/
3000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
KEC
23+
SOT-23
7300
专注配单,只做原装进口现货
询价
KEC
23+
SOT-23
7300
专注配单,只做原装进口现货
询价
KEC
25+
SOT-23
3000
原装正品,假一罚十!
询价
TI
24+
HTSSOP48
6618
公司现货库存,支持实单
询价
KEC
24+
SOT-23
5000
全现原装公司现货
询价
更多BC859BMTF_Q供应商 更新时间2025-5-6 17:01:00