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BC858F

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorencapsulatedinanultrasmallSC-89(SOT490)plasticSMDpackage. NPNcomplements:BC846F,BC847FandBC848Fseries. FEATURES •PowerdissipationcomparabletoSOT23 •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitching

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BC858F

PNPSiliconTransistor(GeneralpurposeapplicationSwitchingapplication)

Descriptions •Generalpurposeapplication •Switchingapplication Features •Highvoltage:VCEO=-55V •ComplementarypairwithBC846F

AUK

AUK corp

BC858F

Generalpurposeapplication

Descriptions •Generalpurposeapplication •Switchingapplication Features •Highvoltage:VCEO=-55V •ComplementarypairwithBC846F

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

BC858-HF

GeneralPurposeTransistor

GeneralPurposeTransistor RoHSDevice HalogenFree Features ​​​​​​​-Ideallysuitedforautomaticinsertion -Powerdissipation PCM:0.25W(@TA=25°C) -Lowcurrent.(max.100mA) -Collector-basevoltage VCBO:BC856=-80V BC857=-50V BC858=-30V

COMCHIPComchip Technology

典琦典琦科技股份有限公司

BC858S

SurfaceMountGeneralPurposeSi-Epi-PlanarDouble-Transistors

DiotecDiotec Semiconductor

德欧泰克

BC858S

SurfacemountSi-EpitaxialPlanarTransistors

SurfaceMountGeneralPurposeSi-Epi-PlanarDouble-Transistors •Powerdissipation300mW •PlasticcaseSOT-363 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDiotec Semiconductor

德欧泰克

BC858S

Powerdissipation,plasticcase,Weightapprox

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation300mW •PlasticcaseSOT-363 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

BC858U

PNPSiliconTransistor(GeneralpurposeapplicationSwitchingapplication)

Descriptions •Generalpurposeapplication •Switchingapplication Features •Highvoltage:VCEO=-30V •ComplementarypairwithBC848U

AUK

AUK corp

BC858U

Generalpurposeapplication

Descriptions •Generalpurposeapplication •Switchingapplication Features •Highvoltage:VCEO=-30V •ComplementarypairwithBC848U

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

BC858U

GeneralPurposeTransistor

GeneralPurposeTransistor PNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–323/SC–70whichisdesignedforlowpowersurfacemountapplications. Features Wedeclarethatthematerialofproductcompliancewith RoHSrequir

FS

First Silicon Co., Ltd

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