BC858V

Ideallysuitedforautomaticinsertion

BC858W

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC858W

EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •ForComplementaryWithNPNTypeBC846W/847W/848W

BC858W

PNPSiliconEpitaxialPlanarTransistor

FEATURES ●Ideallysuitedforautomaticinsertion. ●Powerdissipation.(PC=200mW) APPLICATIONS ●Generalpurposeswitchingandamplificationapplication.

BC858W

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors

BC858W

PNPGeneralPurposeTransistor

■Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications

BC858W

PNPSiliconEpitaxialPlanarTransistor

PNPSiliconEpitaxialPlanarTransistor forgeneralpurposeandswitchingapplications

BC858W

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT323plasticpackage. NPNcomplements:BC846W,BC847WandBC848W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification.

BC858W

PNPGENERALPURPOSETRANSISTORS

VOLTAGE30/45/65VoltsCURRENT200mWatts FEATURES •Generalpurposeamplifierapplications •PNPepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •Complimentary(NPN)Devices:BC846W/BC847W/BC848W/BC849WSeries •IncompliancewithEURoHS2002/95/ECdirectives

BC858W

PNPSiliconAFTransistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846W,BC847W,BC848W,BC849W,BC850W(NPN)